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onsemi FJD5304DTF

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
2.39 mm
Length
6.73 mm
Width
IBS

Physical

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Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
700 V
Collector Emitter Breakdown Voltage
400 V
Collector Emitter Saturation Voltage
1.5 V
Collector Emitter Voltage (VCEO)
400 V
Current Rating
4:00 AM
Element Configuration
4 A
Emitter Base Voltage (VEBO)
12 V
hFE Min
8
Max Breakdown Voltage
400 V
Max Collector Current
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
30 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
1.25 W
Voltage Rating (DC)
400 V

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