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onsemi FJA13009TU

Bipolar (BJT) Single Transistor, NPN, 400 V, 4 MHz, 130 W, 12 A, 6

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
20.1 mm
Length
15.8 mm
Width
5 mm

Physical

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Mount
Through Hole
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
EOL

Technical

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Collector Base Voltage (VCBO)
700 V
Collector Emitter Breakdown Voltage
400 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
3 V
Current Rating
12:00 AM
Element Configuration
12 A
Emitter Base Voltage (VEBO)
9 V
Frequency
4 MHz
Gain Bandwidth Product
4 MHz
hFE Min
23.8 mm
Max Collector Current
12 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
130 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
130 W
Transition Frequency
4 MHz
Voltage Rating (DC)
400 V

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