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onsemi FDS89161LZ

Dual N-Channel Shielded Gate PowerTrench MOSFET 100V, 2.7A, 105m

Product Details

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Compliance

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Radiation Hardening
No
RoHS
105 mΩ

Dimensions

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Height
1.575 mm
Length
4.9 mm
Width
IBS

Physical

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Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
187 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
2.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
105 mΩ
Drain to Source Voltage (Vdss)
105 mΩ
Element Configuration
Dual
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Power Dissipation
31 W
Rds On Max
105 mΩ
Rise Time
10 ns
Turn-Off Delay Time
9.5 ns
Turn-On Delay Time
Compliant

Compliance Documents

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