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onsemi FDS8884
Product Details
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Compliance
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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
23 mΩ
Dimensions
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Height
1.5 mm
Length
5 mm
Width
4 mm
Physical
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Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
130 mg
Supply Chain
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Lifecycle Status
Production
Technical
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Continuous Drain Current (ID)
8.5 A
Current Rating
8.5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
19 mΩ
Drain to Source Voltage (Vdss)
19 mΩ
Element Configuration
Single
Fall Time
21 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
2.5 W
Rds On Max
23 mΩ
Rise Time
9 ns
Threshold Voltage
1.7 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
5 ns
Voltage Rating (DC)
IBS