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onsemi FDS6892A

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET 20V, 7.5A, 18m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
18 MΩ

Dimensions

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Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

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Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
187 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
7.5 A
Current Rating
7.5 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
18 mΩ
Drain to Source Voltage (Vdss)
18 mΩ
Dual Supply Voltage
20 V
Element Configuration
Dual
Fall Time
9 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
900 mV
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
2 W
Rds On Max
18 mΩ
Resistance
18 MΩ
Rise Time
18 mΩ
Termination
15 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
26 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
20 V

Compliance Documents

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