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onsemi FDS6875

Dual P-Channel PowerTrench MOSFET, 2.5V Specified, -20V, -6A, 30m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.75 mm
Length
5 mm
Width
4 mm

Physical

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Case/Package
SOIC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
8
Weight
187 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-6 A
Current Rating
-6 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
24 mΩ
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Dual
Fall Time
35 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
2.25 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
2 W
Rds On Max
30 mΩ
Resistance
30 mΩ
Rise Time
15 ns
Threshold Voltage
-800 mV
Turn-Off Delay Time
98 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
-20 V

Compliance Documents

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