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onsemi FDS6679AZ

P-Channel 30 V 9.3 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
9.3 MΩ

Dimensions

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Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

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Case/Package
SOIC
Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
130 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-13 A
Current Rating
-13 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
-7.7 mΩ
Drain to Source Voltage (Vdss)
-7.7 mΩ
Element Configuration
Single
Fall Time
92 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-1.9 V
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2.5 W
Rds On Max
9.3 mΩ
Resistance
9.3 MΩ
Rise Time
9.3 mΩ
Threshold Voltage
15 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
13 ns
Voltage Rating (DC)
IBS

Compliance Documents

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