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onsemi FDS3890

N-Channel 80 V 44 mOhm Surface Mount Dual PowerTrench Mosfet SOIC-8

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
44 MΩ

Dimensions

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Height
1.575 mm
Length
4.9 mm
Width
3.9 mm

Physical

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Case/Package
SOIC
Mount
-55 °C
Number of Pins
8

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
4.7 A
Current
47 A
Current Rating
4.7 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
34 mΩ
Drain to Source Voltage (Vdss)
34 mΩ
Fall Time
12 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
2 W
Rds On Max
44 mΩ
Resistance
44 MΩ
Rise Time
44 mΩ
Threshold Voltage
8 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
11 ns
Voltage
IBS
Voltage Rating (DC)
80 V

Compliance Documents

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