Skip to main content

onsemi FDP18N50

N-Channel Power MOSFET, UniFETTM, 500 V, 18 A, 265 m, TO-220

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
265 MΩ

Dimensions

Select to search
related specs
Height
9.4 mm
Length
10.1 mm
Width
4.7 mm

Physical

Select to search
related specs
Case/Package
TO-220-3
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
18 A
Current
18 A
Current Rating
18 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
265 mΩ
Drain to Source Voltage (Vdss)
265 mΩ
Element Configuration
Single
Fall Time
90 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
20.4 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
235 W
Rds On Max
265 mΩ
Resistance
265 MΩ
Rise Time
265 mΩ
Threshold Voltage
165 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
55 ns
Voltage
IBS
Voltage Rating (DC)
500 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us