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onsemi FDP085N10A-F102

FDP085N10A-F102 ON Semiconductor MOSFET N-Channel100V 96A 188W Through Hole TO-220-3, RoHS

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
8.5 mΩ

Dimensions

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Height
15.215 mm
Length
10.36 mm
Width
IBS

Physical

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Case/Package
TO-220
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
1.8 g

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
96 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
7.35 mΩ
Drain to Source Voltage (Vdss)
7.35 mΩ
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.695 nF
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
188 W
Rds On Max
8.5 mΩ
Rise Time
22 ns
Turn-Off Delay Time
29 ns
Turn-On Delay Time
Compliant

Compliance Documents

Purchase

Availability
600
Unit Price
$1.7469
Total Price
$434.9856
Minimum: 249
Multiples: 600
Quantity must be in multiples of 600
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