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onsemi FDN5632N_F085

Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1.12 mm

Physical

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Case/Package
SOT-23-3
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
1.7 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
57 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
1.3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
475 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.1 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape (CT)
Power Dissipation
1.1 W
Rds On Max
82 mΩ
Rise Time
1.7 ns
Turn-Off Delay Time
5.2 ns
Turn-On Delay Time
15 ns

Compliance Documents

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