Skip to main content

onsemi FDN5618P

P-Channel PowerTrench MOSFET, 60V, -1.25A, 170m

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.22 mm
Length
2.92 mm
Width
1.4 mm

Physical

Select to search
related specs
Case/Package
SOT-23-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
1.25 A
Current Rating
-1.25 A
Drain to Source Breakdown Voltage
-60 V
Drain to Source Resistance
170 mΩ
Drain to Source Voltage (Vdss)
-60 V
Dual Supply Voltage
-60 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
430 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Nominal Vgs
20 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
170 mΩ
Resistance
170 mΩ
Rise Time
8 ns
Termination
SMD/SMT
Threshold Voltage
-1.6 V
Turn-Off Delay Time
16.5 ns
Turn-On Delay Time
6.5 ns
Voltage Rating (DC)
-60 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us