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onsemi FDN358P

P-Channel PowerTrench MOSFET, Logic Level, -30V, -1.5A, 125m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.22 mm
Length
2.92 mm
Width
3.05 mm

Physical

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Case/Package
SOT-23
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
1.5 A
Current Rating
-1.5 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
125 mΩ
Drain to Source Voltage (Vdss)
-30 V
Dual Supply Voltage
-30 V
Element Configuration
Single
Fall Time
13 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
182 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
460 mW
Min Operating Temperature
-55 °C
Nominal Vgs
-1.9 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
125 mΩ
Resistance
125 MΩ
Rise Time
13 ns
Threshold Voltage
-1.9 V
Turn-Off Delay Time
12 ns
Turn-On Delay Time
5 ns
Voltage Rating (DC)
-30 V

Compliance Documents

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