Skip to main content

onsemi FDN357N

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.9A, 90m

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.12 mm
Length
2.92 mm
Width
3.05 mm

Physical

Select to search
related specs
Case/Package
SOT-23
Mount
Surface Mount
Number of Pins
3
Number of Terminals
3
Weight
30 mg

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
1.9 A
Current Rating
1.9 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
81 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
12 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
235 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Breakdown Voltage
30 V
Min Operating Temperature
-55 °C
Nominal Vgs
1.6 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
60 mΩ
Resistance
60 MΩ
Rise Time
12 ns
Termination
SMD/SMT
Threshold Voltage
1.6 V
Turn-Off Delay Time
12 ns
Turn-On Delay Time
5 ns
Voltage Rating (DC)
30 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us