Skip to main content

onsemi FDN352AP

P-Channel PowerTrench MOSFET -30V, -1.3A, 180m

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.22 mm
Length
2.92 mm
Width
1.4 mm

Physical

Select to search
related specs
Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Continuous Drain Current (ID)
-1.3 A
Current
13 A
Current Rating
-1.3 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
180 mΩ
Drain to Source Voltage (Vdss)
-30 V
Dual Supply Voltage
-30 V
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
150 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Nominal Vgs
-2 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
500 mW
Rds On Max
180 mΩ
Resistance
180 MΩ
Rise Time
15 ns
Termination
SMD/SMT
Threshold Voltage
-2 V
Turn-Off Delay Time
10 ns
Turn-On Delay Time
4 ns
Voltage
30 V
Voltage Rating (DC)
-30 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us