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onsemi FDMS86181

N-Channel Shielded Gate PowerTrench MOSFET 100V, 124A, 4.2m

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
1.1 mm

Physical

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Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.3 mΩ
Drain to Source Voltage (Vdss)
3.3 mΩ
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
4.125 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
2.5 W
Rds On Max
4.2 mΩ
Threshold Voltage
2 V
Turn-Off Delay Time
25 ns
Turn-On Delay Time
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