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onsemi FDMS86103L

N-Channel Shielded Gate PowerTrench MOSFET 100V, 81A, 8m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
8 mΩ
RoHS
Compliant

Dimensions

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Height
1.05 mm
Length
5 mm
Width
6.15 mm

Physical

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Contact Plating
Tin
Mount
-55 °C
Number of Pins
8
Weight
68.1 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
49 A
Drain to Source Breakdown Voltage
12 A
Drain to Source Resistance
6.4 mΩ
Drain to Source Voltage (Vdss)
6.4 mΩ
Element Configuration
Single
Fall Time
6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
2.5 W
Rds On Max
8 mΩ
Rise Time
No SVHC
Threshold Voltage
1.9 V
Turn-Off Delay Time
35 ns
Turn-On Delay Time
13 ns

Compliance Documents

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