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onsemi FDMS7620S

Transistor MOSFET Array Dual N-CH 30V 13A/22A 8-Pin Power 56 T/R

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
20 mΩ

Dimensions

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Height
750 µm
Length
5 mm
Width
6 mm

Physical

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Mount
-55 °C
Number of Pins
8
Weight
IBS

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
12.4 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
11.2 mΩ
Drain to Source Voltage (Vdss)
11.2 mΩ
Fall Time
1.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
1 W
Rds On Max
20 mΩ
Rise Time
1.8 ns
Threshold Voltage
2.2 V
Turn-Off Delay Time
17.4 ns
Turn-On Delay Time
Compliant

Compliance Documents

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