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onsemi FDMS3572

N-Channel UltraFET Trench MOSFET 80V, 22A, 16.5m

Product Details

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Compliance

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Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
16.5 mΩ

Dimensions

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Height
750 µm
Length
5 mm
Width
6 mm

Physical

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Mount
-55 °C
Number of Pins
8
Weight
210 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
8.8 A
Current Rating
22 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
16.5 mΩ
Drain to Source Voltage (Vdss)
16.5 mΩ
Element Configuration
Single
Fall Time
12 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
800 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2.5 W
Rds On Max
16.5 mΩ
Rise Time
13 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
24 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
80 V

Compliance Documents

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