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onsemi FDFS2P753Z

Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
115 MΩ

Dimensions

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Height
1.575 mm
Length
4.9 mm
Width
3.9 mm

Physical

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Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
230.4 mg

Technical

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Continuous Drain Current (ID)
3:00 AM
Current Rating
3 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
115 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
31 ns
Forward Current
2 mA
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
455 pF
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
115 mΩ
Resistance
115 MΩ
Rise Time
115 mΩ
Threshold Voltage
Compliant
Turn-Off Delay Time
18 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
-30 V

Compliance Documents

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