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onsemi FDFMA2N028Z

Integrated N-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.7A, 68m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
68 MΩ

Dimensions

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Height
750 µm
Length
2 mm
Width
2 mm

Physical

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Mount
-55 °C
Number of Pins
6
Weight
60 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Continuous Drain Current (ID)
3.7 A
Current Rating
3.7 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
68 mΩ
Drain to Source Voltage (Vdss)
68 mΩ
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
750 µm
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
1.4 W
Rds On Max
68 mΩ
Resistance
68 MΩ
Rise Time
68 mΩ
Threshold Voltage
1 V
Turn-Off Delay Time
8 ns
Turn-On Delay Time
Compliant
Voltage Rating (DC)
IBS

Compliance Documents

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