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onsemi FDD86113LZ

Shielded Gate PowerTrench MOSFET, N-Channel, 100V , 5.5 A, 104 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
104 mΩ

Dimensions

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Height
2.39 mm
Length
6.73 mm
Width
IBS

Physical

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Case/Package
DPAK
Mount
-55 °C
Number of Pins
3
Weight
Compliant

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
4.2 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
87 mΩ
Drain to Source Voltage (Vdss)
87 mΩ
Element Configuration
Single
Fall Time
1.6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.517 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
3.1 W
Rds On Max
104 mΩ
Rise Time
1.3 ns
Turn-Off Delay Time
9.7 ns
Turn-On Delay Time
3.6 ns

Compliance Documents

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