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onsemi FDD86110

Shielded Gate PowerTrench MOSFET, N-Channel, 100 V, 50 A, 10.2 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
2.517 mm
Length
6.73 mm
Width
6.22 mm

Physical

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Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
12.5 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
8.5 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
3.9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.265 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
127 W
Min Operating Temperature
-55 °C
Nominal Vgs
2.8 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
3.1 W
Rds On Max
10.2 mΩ
Rise Time
5.4 ns
Threshold Voltage
2.8 V
Turn-Off Delay Time
19 ns
Turn-On Delay Time
12 ns

Compliance Documents

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