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onsemi FDD6N20TM

N-Channel Power MOSFET, UniFETTM, 200V, 4.5A, 800m, DPAK

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
800 mΩ

Physical

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Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

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Lifecycle Status
EOL

Technical

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Continuous Drain Current (ID)
4.5 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
800 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
12.8 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
230 pF
Max Operating Temperature
150 °C
Max Power Dissipation
40 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
40 W
Rds On Max
800 mΩ
Resistance
800 mΩ
Rise Time
800 mΩ
Threshold Voltage
Compliant
Turn-Off Delay Time
15 ns
Turn-On Delay Time
IBS

Compliance Documents

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