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onsemi FDD3670

PowerTrench MOSFET, 100V N-Channel, 34A, 32m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
32 MΩ

Dimensions

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Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

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Case/Package
TO-252
Mount
-55 °C
Number of Pins
3
Weight
260.37 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
34 A
Current Rating
34 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
22 mΩ
Drain to Source Voltage (Vdss)
22 mΩ
Element Configuration
Single
Fall Time
25 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.517 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
83 W
Rds On Max
32 mΩ
Resistance
32 MΩ
Rise Time
32 mΩ
Threshold Voltage
10 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
16 ns
Voltage Rating (DC)
IBS

Compliance Documents

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