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onsemi FDC8602

Dual N-Channel Shielded Gate PowerTrench MOSFET, 100 V, 1.2 A, 350 m

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
350 mΩ

Dimensions

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Height
1 mm
Length
3 mm
Width
1.7 mm

Physical

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Case/Package
SOT-23-6
Mount
-55 °C
Number of Pins
6
Weight
IBS

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
1.2 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
285 mΩ
Drain to Source Voltage (Vdss)
285 mΩ
Element Configuration
Dual
Fall Time
2.3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
690 mW
Rds On Max
350 mΩ
Rise Time
1.7 ns
Threshold Voltage
3.2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
3.5 ns

Compliance Documents

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