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onsemi FDC638P

Transistor MOSFET P-Channel 20V 4.5A (4500mA) 1.6W (Ta) Surface Mount SuperSOT-6

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
48 MΩ

Dimensions

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Height
1 mm
Length
3 mm
Width
1.7 mm

Physical

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Case/Package
SOT-23-6
Contact Plating
Tin
Mount
-55 °C
Number of Pins
6
Weight
36 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
-4.5 A
Current Rating
-4.5 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
39 mΩ
Drain to Source Voltage (Vdss)
39 mΩ
Dual Supply Voltage
-20 V
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-800 mV
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
48 mΩ
Resistance
48 MΩ
Rise Time
48 mΩ
Threshold Voltage
9 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
9 ns
Voltage Rating (DC)
IBS

Compliance Documents

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