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onsemi FDC6310P

MOSFET Transistor, Dual P Channel, -2.2 A, -20 V, 0.1 ohm, -4.5 V, -1 V

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.1 mm
Length
3 mm
Width
1.7 mm

Physical

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Case/Package
SOT-23
Mount
Surface Mount
Number of Pins
6
Weight
36 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
2.2 A
Current Rating
-2.2 A
Drain to Source Breakdown Voltage
-20 V
Drain to Source Resistance
125 mΩ
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Dual
Fall Time
12 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
337 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
960 mW
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
960 mW
Rds On Max
125 mΩ
Resistance
125 MΩ
Rise Time
12 ns
Threshold Voltage
-1 V
Turn-Off Delay Time
10 ns
Turn-On Delay Time
9 ns
Voltage Rating (DC)
-20 V

Compliance Documents

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