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onsemi FDBL9401-F085

Power Field-Effect Transistor, 300A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
2.4 mm

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
300 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
500 µΩ
Drain to Source Voltage (Vdss)
500 µΩ
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
175 °C
Number of Channels
-55 °C
Power Dissipation
429 W
Turn-Off Delay Time
106 ns
Turn-On Delay Time
54 ns

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