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onsemi FDA18N50

N-Channel Power MOSFET, UniFETTM, 500 V, 19 A, 265 m, TO-3P

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
265 MΩ

Dimensions

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Height
18.9 mm
Length
15.8 mm
Width
5 mm

Physical

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Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
EOL

Technical

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Continuous Drain Current (ID)
19 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
265 mΩ
Drain to Source Voltage (Vdss)
265 mΩ
Element Configuration
Single
Fall Time
90 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2.86 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
239 W
Rds On Max
265 mΩ
Resistance
265 MΩ
Rise Time
265 mΩ
Threshold Voltage
5 V
Turn-Off Delay Time
165 ns
Turn-On Delay Time
Compliant

Compliance Documents

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