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onsemi FCP190N65F

N-Channel Power MOSFET, SUPERFET II, FRFET, 650V, 20.6A, 190m, TO-220

Product Details

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Compliance

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Lead Free
Lead Free
RoHS
Compliant

Dimensions

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Height
16.3 mm
Length
10.67 mm
Width
4.7 mm

Physical

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Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3
Weight
1.8 g

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
20.6 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
190 mΩ
Drain to Source Voltage (Vdss)
650 V
Element Configuration
Single
Fall Time
4.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.225 nF
Max Operating Temperature
150 °C
Max Power Dissipation
208 W
Min Operating Temperature
-55 °C
Number of Channels
1
Rds On Max
190 mΩ
Rise Time
11 ns
Turn-Off Delay Time
62 ns
Turn-On Delay Time
25 ns

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