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onsemi FCMT199N60

N-Channel Power MOSFET, SUPERFET II, FAST, 600 V, 20.2 A, 199 m, Power88

Product Details

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Compliance

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RoHS
Compliant

Dimensions

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Height
1.1 mm
Length
8 mm
Width
8 mm

Physical

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Mount
Surface Mount
Number of Pins
4
Weight
449.03225 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
20.2 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
170 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.95 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
208 W
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
208 W
Rds On Max
199 mΩ
Rise Time
10 ns
Turn-Off Delay Time
64 ns
Turn-On Delay Time
20 ns

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