Skip to main content

onsemi FCD9N60NTM

N-Channel Power MOSFET, SUPREMOS, FAST, 600 V, 9 A, 385 m, DPAK

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
385 mΩ

Dimensions

Select to search
related specs
Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Select to search
related specs
Case/Package
DPAK
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Select to search
related specs
Lifecycle Status
EOL

Technical

Select to search
related specs
Continuous Drain Current (ID)
9:00 AM
Drain to Source Breakdown Voltage
9 A
Drain to Source Resistance
330 mΩ
Drain to Source Voltage (Vdss)
330 mΩ
Element Configuration
Single
Fall Time
11.5 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
92.6 W
Rds On Max
385 mΩ
Rise Time
9.6 ns
Threshold Voltage
3 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
12.7 ns

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us