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onsemi BSS138W

N-Channel MOSFET, Logic Level Enhancement Mode, 50V , 210mA, 3.5

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
900 µm
Length
2 mm
Width
1.25 mm

Physical

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Case/Package
SOT-323
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Continuous Drain Current (ID)
210 mA
Current
2 A
Drain to Source Breakdown Voltage
50 V
Drain to Source Resistance
3.5 Ω
Drain to Source Voltage (Vdss)
50 V
Element Configuration
Single
Fall Time
6.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
38 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
340 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
340 mW
Rds On Max
3.5 Ω
Resistance
3.5 Ω
Rise Time
1.9 ns
Threshold Voltage
1.3 V
Turn-Off Delay Time
6.7 ns
Turn-On Delay Time
2.3 ns
Voltage
50 V

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