Skip to main content

onsemi BSS123W

N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 0.17A, 6

Product Details

Find similar products  

Compliance

Select to search
related specs
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.1 mm

Physical

Select to search
related specs
Case/Package
SOT-323
Mount
Surface Mount
Weight
30 mg

Supply Chain

Select to search
related specs
Lifecycle Status
EOL

Technical

Select to search
related specs
Continuous Drain Current (ID)
170 mA
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
1.39 Ω
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
71 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
200 mW
Rds On Max
6 Ω
Turn-Off Delay Time
8.4 ns
Turn-On Delay Time
2.94 ns

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us