Skip to main content

onsemi BD810G

Bipolar (BJT) Transistor PNP 80 V 10 A 1.5MHz 90 W Through Hole TO-220AB

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
6.35 mm
Length
31.75 mm
Width
12.7 mm

Physical

Select to search
related specs
Case/Package
TO-220-3
Contact Plating
Tin
Number of Pins
3
Weight
4.535924 g

Supply Chain

Select to search
related specs
Lifecycle Status
Production

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
1.1 V
Collector Emitter Voltage (VCEO)
80 V
Current Rating
10 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
1.5 MHz
Gain Bandwidth Product
1.5 MHz
hFE Min
30
Max Collector Current
10 A
Max Operating Temperature
150 °C
Max Power Dissipation
90 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
90 W
Transition Frequency
1.5 MHz
Voltage Rating (DC)
-80 V

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us