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onsemi BD14010STU

Bipolar (BJT) Single Transistor, PNP, -80 V, 12.5 W, -1.5 A, 63

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
11 mm
Length
8 mm
Width
IBS

Physical

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Case/Package
TO-126
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
761 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
-80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
-500 mV
Collector Emitter Voltage (VCEO)
-80 V
Current Rating
-1.5 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
hFE Min
14.2 mm
Max Collector Current
-1.5 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
12.5 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
1.25 W
Voltage Rating (DC)
-80 V

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