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onsemi BD13510STU

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
14.2 mm
Length
8.3 mm
Width
3.45 mm

Physical

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Case/Package
TO-126
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
761 mg

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
45 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
45 V
Current Rating
1.5 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
63
Max Collector Current
1.5 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.25 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
1.25 W
Voltage Rating (DC)
45 V

Compliance Documents

Purchase

Availability
1,920
Unit Price
$0.1768
Total Price
$70.72
Minimum: 400
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