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onsemi BCP56T3G

Transistor, Bipolar, Si, NPN, Medium Power, VCEO 80VDC, IC 1A, PD 1.5W, SOT-223, hFE 25

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.63 mm
Length
6.5 mm
Width
3.5 mm

Physical

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Case/Package
SOT-223-4
Contact Plating
Tin
Number of Pins
4

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Current Rating
1 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
130 MHz
Gain Bandwidth Product
130 MHz
hFE Min
25
Max Breakdown Voltage
80 V
Max Collector Current
1 A
Max Frequency
35 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
1.5 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.5 W
Transition Frequency
130 MHz
Voltage Rating (DC)
80 V

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