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onsemi BCP56T1

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin

Product Details

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Compliance

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Lead Free
Contains Lead
RoHS
Non-Compliant

Physical

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Case/Package
SOT-223
Mount
Surface Mount
Number of Pins
4

Technical

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Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Current Rating
1 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
130 MHz
Gain Bandwidth Product
130 MHz
hFE Min
25
Max Breakdown Voltage
80 V
Max Collector Current
1 A
Max Operating Temperature
150 °C
Max Power Dissipation
1.5 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.5 W
Transition Frequency
130 MHz
Voltage Rating (DC)
80 V

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