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onsemi BCP56

Bipolar (BJT) Transistor NPN 80 V 1.2 A - 1 W Surface Mount SOT-223-4

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.75 mm
Length
6.5 mm
Width
3.5 mm

Physical

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Case/Package
SOT-223
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
188 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Current Rating
1.2 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Gain Bandwidth Product
130 MHz
hFE Min
40
Max Breakdown Voltage
80 V
Max Collector Current
1 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
1 W
Voltage Rating (DC)
80 V

Compliance Documents

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