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onsemi BC857S

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
1.1 mm
Length
2 mm
Width
1.25 mm

Physical

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Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
28 mg

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
-50 V
Collector Emitter Breakdown Voltage
-45 V
Collector Emitter Saturation Voltage
-650 mV
Collector Emitter Voltage (VCEO)
-45 V
Current Rating
-200 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
-5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
125
Max Breakdown Voltage
45 V
Max Collector Current
-200 mA
Max Frequency
200 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Number of Elements
2
Polarity
PNP
Power Dissipation
300 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
-45 V

Compliance Documents

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