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onsemi BC856BMTF

BC856 Series 65 V CE Breakdown .1 A PNP Epitaxial Silicon Transistor - SOT-23

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
970 µm
Length
2.9 mm
Width
1.3 mm

Physical

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Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
-80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
-250 mV
Collector Emitter Voltage (VCEO)
-65 V
Current Rating
-100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
150 MHz
Gain Bandwidth Product
150 MHz
hFE Min
1.2 mm
Max Breakdown Voltage
65 V
Max Collector Current
-100 mA
Max Frequency
150 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
310 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
310 mW
Transition Frequency
150 MHz
Voltage Rating (DC)
-65 V

Compliance Documents

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