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onsemi BC856BM3T5G

Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 265 mW Surface Mount SOT-723

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
Y
RoHS
Compliant

Dimensions

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Height
550 µm
Length
1.25 mm
Width
IBS

Physical

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Case/Package
SOT-723-3
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
-650 mV
Collector Emitter Voltage (VCEO)
65 V
Current Rating
-100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
550 µm
Max Breakdown Voltage
65 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
265 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
640 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
-65 V

Compliance Documents

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