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onsemi BC856BDW1T3G

ON Semi BC856BDW1T3G Dual PNP Bipolar Transistor; 0.1 A; 65 V; 6-Pin SOT-363

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
950 µm
Length
2.08 mm
Width
1.25 mm

Physical

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Case/Package
SOT-363-6
Number of Pins
6

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
-650 mV
Collector Emitter Voltage (VCEO)
65 V
Current Rating
-100 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
-5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
220
Max Breakdown Voltage
65 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
380 mW
Min Operating Temperature
-55 °C
Number of Elements
2
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
380 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
-65 V

Compliance Documents

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