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onsemi BC848CPDW1T1G

on Semiconductor - BC848CPDW1T1G - Bipolar Transistor, NPN & PNP, 30V, Full Reel

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
1 mm
Length
2.2 mm
Width
IBS

Physical

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Case/Package
SOT-363-6
Contact Plating
Tin
Number of Pins
6

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
600 mV
Collector Emitter Voltage (VCEO)
30 V
Current Rating
100 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
270
Max Breakdown Voltage
40 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
380 mW
Min Operating Temperature
-55 °C
Number of Elements
2
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
380 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
30 V

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