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onsemi BC848BWT1G

Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
900 µm
Length
2.2 mm
Width
1.35 mm

Physical

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Case/Package
SC
Contact Plating
Tin
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
600 mV
Collector Emitter Voltage (VCEO)
30 V
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
150
Max Breakdown Voltage
30 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
150 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
30 V

Compliance Documents

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