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Home Products Discrete Semiconductors Transistors BJTs BC846BLT1G

onsemi BC846BLT1G

Transistor, Bipolar, Si, NPN, General Purpose, VCEO 65VDC, IC 100mA, PD 225mW, SOT-23
Datasheet

Product Details

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Compliance

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Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

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Height
940 µm
Length
2.9 mm
Width
1.3 mm

Physical

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Case/Package
SOT-23-3
Contact Plating
Tin
Number of Pins
3

Supply Chain

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Lifecycle Status
Production

Technical

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Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
600 mV
Collector Emitter Voltage (VCEO)
65 V
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
200
Max Breakdown Voltage
65 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Noise Figure
10 dB
Number of Elements
1
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
300 mW
Transition Frequency
100 MHz
Type
General Purpose
Voltage Rating (DC)
65 V

Compliance Documents

Datasheet
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Lead Time (weeks)
19
Unit Price
$0.028
Total Price
$27.95
Minimum: 1,000
Multiples: 1,000
Quantity must be in multiples of 1,000
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