Skip to main content

onsemi BC81740MTF

BC817 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor - SOT-23

Product Details

Find similar products  

Compliance

Select to search
related specs
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Select to search
related specs
Height
1.2 mm
Length
2.9 mm
Width
1.3 mm

Physical

Select to search
related specs
Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

Select to search
related specs
Lifecycle Status
Obsolete

Technical

Select to search
related specs
Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
700 mV
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
60
Max Breakdown Voltage
45 V
Max Collector Current
800 mA
Max Frequency
100 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
310 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
310 mW
Transition Frequency
100 MHz

Compliance Documents

Purchase

Call or Request Quote for Pricing
Request a Quote

Need Assistance?

Contact Us