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onsemi BC81716MTF

BC817 Series 45 V CE Breakdown .8 A NPN Epitaxial Silicon Transistor - SOT-23

Product Details

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Compliance

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Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

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Height
970 µm
Length
2.9 mm
Width
1.3 mm

Physical

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Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
IBS

Supply Chain

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Lifecycle Status
Obsolete

Technical

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Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
700 mV
Collector Emitter Voltage (VCEO)
45 V
Current
8:00 AM
Element Configuration
8 A
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
970 µm
Max Breakdown Voltage
45 V
Max Collector Current
800 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
310 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape & Reel (TR)
Polarity
NPN
Power Dissipation
310 mW
Transition Frequency
100 MHz
Voltage
45 V

Compliance Documents

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